Shape Changes in Patterned Planar InAs as a Function of Thickness and Temperature
Identifieur interne : 003947 ( Main/Repository ); précédent : 003946; suivant : 003948Shape Changes in Patterned Planar InAs as a Function of Thickness and Temperature
Auteurs : RBID : Pascal:11-0031964Descripteurs français
- Pascal (Inist)
- Autoassemblage, Traitement thermique, Composé binaire, Indium Arséniure, Point quantique, Composé III-V, Effet dimensionnel, Nanomatériau, Nucléation, Synthèse nanomatériau, Mécanisme croissance, Recuit thermique, Couche mince, InAs, As In, 0130C, 8107T, 8116, 8116R, 8565, 8116D, 8535B, 8107B, 6460Q.
English descriptors
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Abstract
Quantum dots have the potential to produce devices with enhanced properties. However, many quantum dot devices require the quantum dots to have a precise size and a precise location for optimum operation. So far approaches such as directed assembly and self assembly have failed due to the random effects resulting during nucleation of the quantum dots. InAs grown under metal rich conditions can remain planar as opposed to forming the self assembled quantum dot morphology. Recently we have demonstrated that planar InAs when patterned via tip-based scribing and then annealed under an As pressure typical for self-assembled quantum dot growth reorganizes and assumes a 3D morphology. We have been studying this process as a potential method to precisely locate quantum dots with definable sizes. In this work we report change in the morphology for different thickness of planar InAs for various pattern dimensions and annealing temperatures. We have analyzed the composition of the films after annealing to determine the effect induced in the films from patterning resulting from scribing. Using this approach, arrays of 3D InAs mounds have been formed with mounds having base dimensions of 800, 500, and 350Å. These results demonstrate that the smaller patterns are less stable and coarsening becomes more dominant.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Shape Changes in Patterned Planar InAs as a Function of Thickness and Temperature</title><author><name sortKey="Eyink, K G" uniqKey="Eyink K">K. G. Eyink</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>AFRL/ RXPS, Wright Patterson AFB</s1><s2>OH</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Ohio</region></placeName></affiliation></author><author><name sortKey="Grazulis, L" uniqKey="Grazulis L">L. Grazulis</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>University of Dayton</s1><s2>Dayton, OH</s2><s3>USA</s3><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>University of Dayton</wicri:noRegion></affiliation></author><author><name sortKey="Mahalingam, K" uniqKey="Mahalingam K">K. Mahalingam</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>UTC</s1><s2>Dayton, OH</s2><s3>USA</s3><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Utah</region></placeName></affiliation></author><author><name sortKey="Twyman, M" uniqKey="Twyman M">M. Twyman</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Southwestern Ohio Council for Higher Education, Wright State University</s1><s2>Dayton, OH</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Dayton, OH</wicri:noRegion></affiliation></author><author><name sortKey="Shoaf, J" uniqKey="Shoaf J">J. Shoaf</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Southwestern Ohio Council for Higher Education, Wright State University</s1><s2>Dayton, OH</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Dayton, OH</wicri:noRegion></affiliation></author><author><name sortKey="Hoelscher, J" uniqKey="Hoelscher J">J. Hoelscher</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Wright State University</s1><s2>Dayton, OH</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Wright State University</wicri:noRegion></affiliation></author><author><name sortKey="Claflin, C" uniqKey="Claflin C">C. Claflin</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Wright State University</s1><s2>Dayton, OH</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Wright State University</wicri:noRegion></affiliation></author><author><name sortKey="Tomich, D" uniqKey="Tomich D">D. Tomich</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>AFRL/ RXPS, Wright Patterson AFB</s1><s2>OH</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Ohio</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0031964</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 11-0031964 INIST</idno><idno type="RBID">Pascal:11-0031964</idno><idno type="wicri:Area/Main/Corpus">003830</idno><idno type="wicri:Area/Main/Repository">003947</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Growth mechanism</term><term>Heat treatments</term><term>III-V compound</term><term>Indium Arsenides</term><term>Nanomaterial synthesis</term><term>Nanostructured materials</term><term>Nucleation</term><term>Quantum dots</term><term>Self-assembly</term><term>Size effect</term><term>Thermal annealing</term><term>Thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Autoassemblage</term><term>Traitement thermique</term><term>Composé binaire</term><term>Indium Arséniure</term><term>Point quantique</term><term>Composé III-V</term><term>Effet dimensionnel</term><term>Nanomatériau</term><term>Nucléation</term><term>Synthèse nanomatériau</term><term>Mécanisme croissance</term><term>Recuit thermique</term><term>Couche mince</term><term>InAs</term><term>As In</term><term>0130C</term><term>8107T</term><term>8116</term><term>8116R</term><term>8565</term><term>8116D</term><term>8535B</term><term>8107B</term><term>6460Q</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Quantum dots have the potential to produce devices with enhanced properties. However, many quantum dot devices require the quantum dots to have a precise size and a precise location for optimum operation. So far approaches such as directed assembly and self assembly have failed due to the random effects resulting during nucleation of the quantum dots. InAs grown under metal rich conditions can remain planar as opposed to forming the self assembled quantum dot morphology. Recently we have demonstrated that planar InAs when patterned via tip-based scribing and then annealed under an As pressure typical for self-assembled quantum dot growth reorganizes and assumes a 3D morphology. We have been studying this process as a potential method to precisely locate quantum dots with definable sizes. In this work we report change in the morphology for different thickness of planar InAs for various pattern dimensions and annealing temperatures. We have analyzed the composition of the films after annealing to determine the effect induced in the films from patterning resulting from scribing. Using this approach, arrays of 3D InAs mounds have been formed with mounds having base dimensions of 800, 500, and 350Å. These results demonstrate that the smaller patterns are less stable and coarsening becomes more dominant.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>7610</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Shape Changes in Patterned Planar InAs as a Function of Thickness and Temperature</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Quantum dots and nanostructures : synthesis, characterization, and modeling VII</s1></fA09><fA11 i1="01" i2="1"><s1>EYINK (K. G.)</s1></fA11><fA11 i1="02" i2="1"><s1>GRAZULIS (L.)</s1></fA11><fA11 i1="03" i2="1"><s1>MAHALINGAM (K.)</s1></fA11><fA11 i1="04" i2="1"><s1>TWYMAN (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>SHOAF (J.)</s1></fA11><fA11 i1="06" i2="1"><s1>HOELSCHER (J.)</s1></fA11><fA11 i1="07" i2="1"><s1>CLAFLIN (C.)</s1></fA11><fA11 i1="08" i2="1"><s1>TOMICH (D.)</s1></fA11><fA12 i1="01" i2="1"><s1>EYINK (Kurt Gerard)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SZMULOWICZ (Frank)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>HUFFAKER (Diana Lynne)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>AFRL/ RXPS, Wright Patterson AFB</s1><s2>OH</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>University of Dayton</s1><s2>Dayton, OH</s2><s3>USA</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>UTC</s1><s2>Dayton, OH</s2><s3>USA</s3><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>Wright State University</s1><s2>Dayton, OH</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="05"><s1>Southwestern Ohio Council for Higher Education, Wright State University</s1><s2>Dayton, OH</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>76100O.1-76100O.8</s2></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham, Wash.</s2></fA25><fA26 i1="01"><s0>978-0-8194-8006-4</s0></fA26><fA26 i1="02"><s0>0-8194-8006-1</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000174695790060</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>13 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0031964</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Quantum dots have the potential to produce devices with enhanced properties. However, many quantum dot devices require the quantum dots to have a precise size and a precise location for optimum operation. So far approaches such as directed assembly and self assembly have failed due to the random effects resulting during nucleation of the quantum dots. InAs grown under metal rich conditions can remain planar as opposed to forming the self assembled quantum dot morphology. Recently we have demonstrated that planar InAs when patterned via tip-based scribing and then annealed under an As pressure typical for self-assembled quantum dot growth reorganizes and assumes a 3D morphology. We have been studying this process as a potential method to precisely locate quantum dots with definable sizes. In this work we report change in the morphology for different thickness of planar InAs for various pattern dimensions and annealing temperatures. We have analyzed the composition of the films after annealing to determine the effect induced in the films from patterning resulting from scribing. Using this approach, arrays of 3D InAs mounds have been formed with mounds having base dimensions of 800, 500, and 350Å. 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